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CROSS-SECTIONAL ELECTRON MICROSCOPY OF SILICON ON SAPPHIRE.ABRAHAMS MS; BUIOCCHI CJ.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 27; NO 6; PP. 325-327; BIBL. 16 REF.Article

THE EPITAXIAL GROWTH OF ZNSE ON SAPPHIRE SUBSTRATES.RATCHEVA TM; DRAGIEVA ID.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 29; NO 2; PP. 579-585; ABS. RUSSE; BIBL. 22 REF.Article

THE EPITAXIAL GROWTH AND PROPERTIES OF SILICON ON STOICHIOMETRIC SPINEL AND SAPPHIRE SUBSTRATES USING SILANE-HELIUM MIXTURES VS. SILANE-HYDROGEN MIXTURESCHIANG YS; LOONEY GW.1973; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1973; VOL. 120; NO 4; PP. 550-553; BIBL. 10 REF.Serial Issue

PREPARATION AND MORPHOLOGY OF GAN-CRYSTALSHOSP W.1972; SIEMENS FORSCH.- U. ENTWICKL.-BER.; DTSCH.; DA. 1972; VOL. 1; NO 3; PP. 312-314; ABS. ALLEM.; BIBL. 7 REF.Serial Issue

PREPARATION AND MORPHOLOGY OF GAN-CRYSTALSHOSP W.1972; SIEMENS FORSCH.- U. ENTWICKL.-BER.; DTSCH.; DA. 1972; VOL. 1; NO 3; PP. 312-314; ABS. ALLEM.; BIBL. 7 REF.Serial Issue

ELECTRON MICROSCOPE STUDY OF EPITAXIAL SILICON FILMS ON SAPPHIRE AND DIAMOND SUBSTRATES.CULLIS AG; BOOKER GR.1976; THIN SOLID FILMS; NETHERL.; DA. 1976; VOL. 31; NO 1-2; PP. 53-67; BIBL. 1 P.Article

THREE-DIMENSIONAL DISTRIBUTION OF TWINS IN EPITAXIAL SILICON ON SAPPHIRE.TRILHE J.1977; J. ELECTROCHEM. SOC.; U.S.A.; DA. 1977; VOL. 124; NO 8; PP. 1299-1300; BIBL. 1 REF.Article

EPITAXIAL GROWTH OF ALUMINIUM NITRIDE FILMS ON SAPPHIRE BY REACTIVE EVAPORATION.YOSHIDA S; MISAWA S; ITOH A et al.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 8; PP. 461-462; BIBL. 15 REF.Article

HALF-WIDTH AND PEAK-INTENSITY MEASUREMENT OF A ROCKING CURVE OBTAINED FROM SILICON ON SAPPHIRE USING SOFT X-RAY BEAMS.KISHINO S; IIDA S; AOKI S et al.1977; J. APPL. PHYS.; U.S.A.; DA. 1977; VOL. 48; NO 7; PP. 3138-3140; BIBL. 17 REF.Article

NBN FILMS PREPARED BY MAGNETRON SPUTTERINGAKUNE T; SAKAMOTO N; SHIBUYA Y et al.1982; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1982; VOL. 21; NO 5; PART. 1; PP. 772-775; BIBL. 27 REF.Article

A MODEL FOR INTERPRETATION OF X-RAY ROCKING CURVE HALF-WIDTHS IN SOSCAREY KW.1982; J. CRYST. GROWTH; ISSN 0022-0248; NLD; DA. 1982; VOL. 58; NO 1; PP. 1-9; BIBL. 14 REF.Article

OBSERVATION OF MICROTWINNING IN SOS BY SCANNING ELECTRON MICROSCOPYZORILLA CARFAGNINI ML; TRILHE J; PITAVAL M et al.1981; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1981; VOL. 128; NO 2; PP. 385-388; BIBL. 8 REF.Article

HETEROEPITAXIAL SILICON GROWTH USING SIH4 IN HELIUM-HYDROGEN ATMOSPHERESMANASEVIT HM.1979; J. ELECTROCHEM. SOC.; ISSN 0013-4651; USA; DA. 1979; VOL. 126; NO 10; PP. 1785-1789; BIBL. 24 REF.Article

EFFECT OF SUBSTRATE TEMPRERATURE ON THE THICKNESS OF EVAPORATED SE-36.7 AT.% AS ALLOY FILMSABOWITZ G; LEDER LB.1978; J. VACUUM SCI. TECHNOL.; USA; DA. 1978; VOL. 15; NO 5; PP. 1746-1751; BIBL. 12 REF.Article

PREPARATION OF INN EPITAXIAL LAYERS IN INCL3-NH3 SYSTEM.MARASINA LA; PICHUGIN IG; TLACZALA M et al.1977; KRISTALL U. TECH.; DTSCH.; DA. 1977; VOL. 12; NO 6; PP. 541-545; ABS. RUSSE; BIBL. 13 REF.Article

PREPARATION OF EPITAXIAL GALLIUMNITRIDE. II.NICKL JJ; JUST W; BERTINGER R et al.1975; MATER RES. BULL.; U.S.A.; DA. 1975; VOL. 10; NO 10; PP. 1097-1104; BIBL. 4 REF.Article

THE VAPOUR PHASE DEPOSITION OF THICK EPITAXIAL (100) ZNS LAYERS ON ELEMENTAL AND COMPOUND SUBSTRATES IN H2 GAS FLOW.LILLEY P; KAY PMR; LITTING CNW et al.1975; J. MATER. SCI.; G.B.; DA. 1975; VOL. 10; NO 8; PP. 1317-1322; BIBL. 12 REF.Article

IMPROVEMENT OF CRYSTALLINE QUALITY OF EPITAXIAL SI LAYERS BY ION-IMPLANTATION TECHNIQUESLAU SS; MATTESON S; MAYER JW et al.1979; APPL. PHYS. LETTERS; USA; DA. 1979; VOL. 34; NO 1; PP. 76-78; BIBL. 6 REF.Article

SUR QUELQUES PARTICULARITES DE LA PRECIPITATION DES COUCHES METALLIQUES SUR UN SUPPORT MONOCRISTALLIN SOLIDEGEGUZIN YA E; KONTOROVICH SI; MAKAROVSKIJ NA et al.1978; FIZ. KHIM. OBRABOT. MATER.; S.S.S.R.; DA. 1978; NO 1; PP. 85-88; BIBL. 3 REF.Article

ORIENTATION RELATIONSHIPS OF ALUMINIUM NITRIDE ON SAPPHIRESOKOLOV EB; MALYUKOV BA; KUDAKOV UD et al.1983; CRYSTAL RESEARCH AND TECHNOLOGY (1979); ISSN 0232-1300; DDR; DA. 1983; VOL. 18; NO 1; PP. 53-59; ABS. RUS; BIBL. 6 REF.Article

DYNAMICS OF ND: YAG LASER ANNEALING OF SILICON ON SAPPHIRELUTHY W; AFFOLTER K; WEBER HP et al.1979; APPL. PHYS. LETT.; ISSN 0003-6951; USA; DA. 1979; VOL. 35; NO 11; PP. 873-875; BIBL. 9 REF.Article

CRISTALLISATION DIRIGEE ET PROPRIETES DES COUCHES MINCES DE GASB SUR SAPHIRPADALKO AG; FILIPCHENKO AS; CHAJKINA EM et al.1978; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1978; VOL. 14; NO 11; PP. 1976-1977; BIBL. 2 REF.Article

EARLY GROWTH OF SILICON ON SAPPHIRE. II. MODELS.BLANC J; ABRAHAMS MS.1976; J. APPL. PHYS.; U.S.A.; DA. 1976; VOL. 47; NO 12; PP. 5151-5160; BIBL. 12 REF.Article

CINETIQUE DE CROISSANCE EPITAXIQUE DE GAN DANS LE SYSTEME GA-HCL-NH3PICHUGIN IG; TLACHALA M.1976; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1976; VOL. 12; NO 11; PP. 2051-2053; BIBL. 11 REF.Article

HALL AND FIELD EFFECT MOBILITY OF CDS FILMS SUBLIMED ON SAPPHIRE SUBSTRATES.TYAGI MS.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 30; NO 2; PP. 609-617; ABS. ALLEM.; BIBL. 17 REF.Article

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